IKONIC™ 4250L
Next-generation pad
for SiC single-wafer polish process
The polymer formulation IKONIC™ 4250L delivers a high removal rate. It also meets the surface roughness requirements for 200 mm
SiC wafers. The controlled porosity and tight distribution of the pore size results in longer pad lifetime. The pad formulation IKONIC™
4250L also ofers the possibility for longer lifetime due to lower cut rates with pad conditioning. The pad is with or without subpad.
Slurry-reduction grooving options are available to lower slurry consumption and reduce costs.
Highlights
Breakthrough pad platform for single-wafer SiC processing
Delivers a high removal rate
Meets the surface roughness requirements for 200 mm SiC wafers
Product Specifications
Base material
Urethane
Shelf life
12 months
Applications
Gallium nitride, gallium arsenide, germanium, sapphire, silicon, silicon carbide
Interested in the
IKONIC™ 4250L Polishing Pad?
We are happy to share our knowledge with you
and remain at your disposal for any further questions.
and remain at your disposal for any further questions.
Adam Nielsen
- Product Manager
- +1 480 505 3425
- anielsen@pureon.com
