Polishing Pads


Next-generation pad
for SiC single-wafer polish process

The polymer formulation IKONIC™ 4250L delivers a high removal rate. It also meets the surface roughness requirements for 200 mm SiC wafers. The controlled porosity and tight distribution of the pore size results in longer pad lifetime. The pad formulation IKONIC™ 4250L also o􀉾fers the possibility for longer lifetime due to lower cut rates with pad conditioning. The pad is with or without subpad. Slurry-reduction grooving options are available to lower slurry consumption and reduce costs.


Breakthrough pad platform for single-wafer SiC processing

Delivers a high removal rate

Meets the surface roughness requirements for 200 mm SiC wafers

Product Specifications

Base material


Shelf life

12 months


Gallium nitride, gallium arsenide, germanium, sapphire, silicon, silicon carbide

Interested in our
IKONIC™ 4250L Polishing Pad?

We are happy to share our knowledge with you
and remain at your disposal for any further questions.

Adam Nielsen