New technical advancements and requirements necessitate the use of silicon carbide (SiC) for many demanding semiconductor applications. Due to its physical and electronic properties, SiC based devices are well suited for high temperature and high-power/high-frequency electronic devices enabling the advancements in Electric Vehicles (EVs), 5G and IOT technologies. While they bring a lot of benefits for the end-user, the production of high-quality SiC substrates presents many challenges to wafer manufacturers.