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Next-generation pad for SiC single-wafer polish process

The newest pad technology, IKONIC™ 4250L is a breakthrough pad platform for single-wafer SiC processing. The polymer formulation IKONIC™ 4250L delivers a high removal rate. It also meets the surface roughness requirements for 200 mm SiC wafers. The controlled porosity and tight distribution of the pore size results in longer pad lifetime. The pad formulation IK4250L also offers the possibility for longer lifetime due to lower cut rates with pad conditioning. The pad is with or without subpad. Slurry-reduction grooving options are available to lower slurry
consumption and reduce costs.


  • Breakthrough pad platform for single-wafer SiC processing
  • Delivers a high removal rate
  • Meets the surface roughness requirements for 200 mm SiC wafers


For more detailed information, download our datasheet:

Interested in our polishing pads for advanced materials?


We are happy to share our knowledge with you and remain at your disposal for any further questions.

Adam Nielsen

Product Manager Polishing Pads for Advanced Materials