Next-generation pad for SiC single-wafer polish process
The newest pad technology, IKONIC™ 4250L is a breakthrough pad platform for single-wafer SiC processing. The polymer formulation IKONIC™ 4250L delivers a high removal rate. It also meets the surface roughness requirements for 200 mm SiC wafers. The controlled porosity and tight distribution of the pore size results in longer pad lifetime. The pad formulation IK4250L also offers the possibility for longer lifetime due to lower cut rates with pad conditioning. The pad is with or without subpad. Slurry-reduction grooving options are available to lower slurry consumption and reduce costs.
Highlights
Breakthrough pad platform for single-wafer SiC processing
Delivers a high removal rate
Meets the surface roughness requirements for 200 mm SiC wafers
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